| 摘要 |
PURPOSE:To raise the cut-off frequency by connecting a gate terminal of each FET and a reactance circuit through a capacitor having a prescribed capacity, and also connecting each gate terminal of each adjacent FET by a resistance of a high resistance. CONSTITUTION:A gate terminal 4 of each FET 3 and a reactance circuit are connected through a capacitor 10 which has been loaded in series to the gate terminal, and also, each gate terminal 4 of each adjacent FET is connected through a resistance 11 of a high resistance. The resistance 11 has a sufficiently higher resistance than the input impedance of the FET, therefore, no influence is exerted on a microwave. Also, a gate bias current of the FET scarcely flows, therefore, a gate bias voltage which has been impressed to a gate bias impressing terminal 12 is impressed as it is to the gate terminal 4 of each FET 3. By loading the capacity 10 of a capacity C, an effective capacity Ce becomes small. That is, by loading the capacitor 10, a cut-off frequency can be raised, and the upper limit value of an available frequency can be raised. |
