| 摘要 |
PURPOSE:To remove a strain layer created by polishing and obtain a flat and stable semiconductor substrate by a method wherein the semiconductor substrate is mechanically polished to the thickness of less than 150mum and the surface layer of the polished part is subjected to chemical etching. CONSTITUTION:An N-type GaAs layer 12, a P-type GaAs layer 13, a P-type GaAlAs layer 14, electrodes 16 and a reflection preventing film 17 are formed on one surface of a thick cut Si substrate 11 and subjected to mesa etching to divide into solar battery elements. Mechanical polishing is applied to the backside of the substrate 11 to make the thickness of the substrate 11 less than 150mum. The polished backside of the substrate 11 is subjected to etching with etchant such as NaOH (30%) or KOH (30%) to remove a strain layer created by mechanical polishing. A backside electrode 15 is formed on the etched backside of the substrate 11 to obtain a flat and stable thin semiconductor substrate. |
