| 摘要 |
A piezoresistive strain gage is produced by forming a pressure-responsive diaphragm from a suitably oriented single crystal of silicon of negative conductivity type and forming one or more complete Wheatstone bridge structures of opposite conductivity type in a diaphragm surface as a compact unitary diffusion pattern comprising two sets of opposite bridge arms extending radially and tangentially, respectively, parallel to respective selected crystal axes, the diffusion pattern including all interconnections between those arms. The unitary nature of such bridge structures reduces inaccuracies of previous structures that were due to thermal and aging effects, and facilitates production of several electrically isolated bridge configurations on a single diaphragm, enhancing potential quality, accuracy and reliability.
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