发明名称 OVERCURRENT PROTECTION CIRCUIT OF POWER TRANSISTOR
摘要 PURPOSE:To improve the protection effect by detecting a voltage of collector- emitter of a power transistor (TR) by a voltage detector so as to detect an overcurrent thereby reducing the interruption time of the overcurrent. CONSTITUTION:In addition to a similar protection circuit as a conventional circuit, a collector-emitter voltage VCE of the power TR 1 is detected by a voltage detector 8, the detected voltage activates a base drive circuit 2 to interrupt the current of the TR 1. The voltage VCE shown a characteristic shown in figure with respect to a collector current IC when the base current is constant. In setting the detection point of the voltage detector 8 to a value within both voltages V1 and V2 where the voltage VCE changes linearly, e.g., a current I1, when the collector current IC of the TR 1 increases from the current I1 and the voltage VCE is increased, the voltage detector 8 detects it and the collector current IC is interrupted via the base drive circuit 2. Thus, not only the interruption time is reduced but also the protection circuit is duplicated.
申请公布号 JPS6292615(A) 申请公布日期 1987.04.28
申请号 JP19850232604 申请日期 1985.10.18
申请人 FUJI ELECTRIC CO LTD 发明人 KIYOMITSU SHINTARO;TOMITA HIROO
分类号 H03K17/08 主分类号 H03K17/08
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