发明名称 |
Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region |
摘要 |
A temperature compensation system for semiconductor logic gates where the temperature compensation is accomplished by two depletion mode FET's in electrical series relationship is disclosed. One of the FET's is adapted to operate in its triode region of operation and the other in its saturation region of operation.
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申请公布号 |
US4661726(A) |
申请公布日期 |
1987.04.28 |
申请号 |
US19850793379 |
申请日期 |
1985.10.31 |
申请人 |
HONEYWELL INC. |
发明人 |
BIARD, JAMES R. |
分类号 |
H03K19/0952;H03K19/003;H03K19/0956;(IPC1-7):H03K17/14;H03K19/094 |
主分类号 |
H03K19/0952 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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