| 摘要 |
PURPOSE:To exactly attain a high speed operation by connecting a bit line to a pull-up power source through a load transistor within a memory cell, etc., controlled through a word line. CONSTITUTION:Load transistors T7 and T8 provided approaching to a memory cell within a static memory cell of matrix arrangement, etc., are made turn on in a memory selection time through the word line W of the memory cell. And each of bit lines B and the inverse of B is connected to a pull-up power source Vpull, a pull-up voltage being applied on bit lines B1 and B2. Since a pull-up transistor that is an adjacent element of the memory cell and having a similar characteristic is used, a voltage fluctuation between both bit lines is generated in a lower level and a required voltage can be obtained rapidly, the high speed operation of a semiconductor memory device being performed exactly. |
