| 摘要 |
PURPOSE:To readily form a semiconductor memory cell having an Hi-C structure by bonding spin ON glass layers having a P-type impurity and an N-type impurity of different diffusing speeds in a groove, and simultaneously diffusing to form the P-type first diffused region and the N-type second diffused region. CONSTITUTION:A groove 2 is formed on a negative conductivity type semiconductor substrate 1, a P-type silicon semiconductor substrate 1 is covered with a silicon oxide film 3 and a CVD silicon nitride film 4, the substrate 1 formed with the prescribed groove 2 is exposed, anisotropically etched by RIE to form the groove 2. A glass layer 5 containing a reverse conductivity type impurity to the negative conductivity type impurity having different diffusing speed is bonded to the substrate 1 including the groove 2. The P-type and N-type impurities are simultaneously diffused to the side of the groove 2 to form the first and second diffused regions 6, 7. A thin insulating film 8 is formed on the groove 2, a cell-plate electrode 9 is formed on the film 9, and the transistor of a semiconductor memory cell is formed. |
