| 摘要 |
PURPOSE:To prevent the deterioration and color mixture of resolution by isolating semiconductor elements from one another by an insulating isolation layer in which the resistance of one part of an amorphous silicon layer is increased by implanted ions. CONSTITUTION:A photodiode 2 consisting of a p-type amorphous silicon p-layer 20 and an i-type amorphous silicon i-layer 22 laminated onto a MOS scanning circuit substrate 1 stores photo-charges corresponding to incident beams, thus constituting one-dimensional or two-dimentional photosensitive cell array. Base electrodes 24 are arranged at intervals between the i-layer 22 and the substrate 1. The base electrodes 24 are electrodes of every photosensitive cell for the diode 2. A transparent electrode layer 26 is laminated onto the upper surface of the p-layer 20, and shielding layers 28 for shielding light are laminated mutually at intervals on the upper surface of the layer 26. Insulating isolation layers 200 for insulating and isolating picture elements are formed to the p-layer 20 and the i-layer 22. The insulating isolation layers 200 are shaped by implanting the ions of atoms of oxygen or nitrogen or the like to the p-layer 20 and the i-layer 22 and annealing. |
