| 摘要 |
PURPOSE:To reduce the size without decreasing a capacitor capacity by forming the first and second conductor layers of specific shape through the first semiconductor layer and an insulating film on a capacitor region. CONSTITUTION:An oxide film 12 to become a separating region is formed in a substrate 11. Then, an N<+> type diffused layer 13 is formed on the entire capacitor region, and N<+> type diffused layers 14, 15 are formed on the transistor region. Then, an oxide film 16 is formed, the first polysilicon layer 18 of the first conductor layer is formed, and one end is connected with the layer 14. An oxide film 17 is formed on the layer 18, the second layer 19 of the second conductor layer connected with the layer 13 is formed, and a layer 20 is simultaneously formed. Then, after the substrate 11 is covered with an oxide film 21, a contacting hole is formed, and wirings 22 are formed. Charge storage regions are formed between the layers 13 and 13 and between the layers 18 and 19, the capacity of the capacitor region is increased to reduce the area of the capacitor region. |
