发明名称 GATE DRIVE CIRCUIT FOR GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To protect a GTO thyristor from overvoltage damage at a fault by connecting a gate terminal of a semiconductor switch of the off-side circuit to a gate of an ON-gate current supplying capacitor via a clamp diode. CONSTITUTION:The positive terminal of the ON-gate current circuit capacitor 1 and a semiconductor switch 4 of the OFF side gate current circuit are connected via a clamp diode 8 flowing a current to the capacitor 1 only. Thus, when the semiconductor switch 4 interrupts the off-side current at the fault of the GTO thyristor, the interrupting current bipassed to the capacitor 1 via the diode 8. Thus, the voltage applied to the semiconductor switch 4 is clamped to a sum being a charging voltage of the capacitor 1 and a charging voltage of the capacitor 5 to protect the semiconductor switch 4 from an overvoltage.
申请公布号 JPS6291018(A) 申请公布日期 1987.04.25
申请号 JP19850232063 申请日期 1985.10.16
申请人 FUJI ELECTRIC CO LTD 发明人 SAOTOME HIDEO;KOSAKA KENJI
分类号 H03K17/73;H03K17/732 主分类号 H03K17/73
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