| 摘要 |
1,274,362. Semi-conductors. MATSUSHITA ELECTRONICS CORP. 16 March, 1970 [20 March, 1969], No. 12580/70. Heading H1K. Impurity elements are diffused into a semiconductor, e.g. silicon substrate, to give N- or P-type conductivities, by dissolving an impurity compound, e.g. phosphorous pentoxide, phosphoric acid, arsenic trioxide, arsenic trichloride, antimony trichloride, diboron trioxide, aluminium chloride, gallium chloride, indium chloride; into a volatile solvent, e.g. water ethanol, ethyl cellosolve, methanol, ethyl ether, amylacetate, acetone, dioxane, acetic acid esters, dioxane; together with an organic coating material, e.g. pyroxylin, acetyl cellulose, polyvinyl acetate, polyvinyl alcohol; the mixture being coated on the substrate and the solvent evaporated; after which the impurity is diffused into the substrate by heating. Autoradiography of the substrate after diffusion of labelled phosphorus impurity shows the distribution thereof. |
