LATERAL DMOS TRANSISTOR DEVICE HAVING AN INJECTOR REGION

摘要

A lateral DMOS transistor (1) includes a surface-adjoining injector region (32) between the channel region (16) and the drain region (20) of the device. This injector region (32) is connected to an external source of potential and serves to substantially decrease the on-resistance of the device by injecting minority carriers into the drift region when the device is in the "on" state. This improvement in on-resistance is obtained without degrading the breakdown voltage characteristics of the transistor.