Method of producing a VLSI semiconductor circuit device of the standard wafer type

摘要

In a method of producing a VLSI semiconductor circuit device of the standard wafer type, in addition to producing semiconductor elements in a semiconductor substrate in a standard process, a polycrystalline silicon layer (2), which serves as a resistance element, is produced on an oxide film (1) after the oxide film (1) has been formed for the purpose of electrical isolation of the semiconductor elements. At the same time a metal silicide layer (3) having a high melting point is applied in some areas on the polycrystalline silicon layer (2) in a wafer treatment process. This is done in such a way that the resistance element having the polycrystalline silicon layer (2) assumes a desired resistance value (R), electrodes (5) are provided on the metal silicide layer (3) having the high melting point, and the semiconductor elements are connected to the resistance elements by conductors. <IMAGE>