| 摘要 |
PURPOSE:To implement a structure, which can be manufactured readily, by forming one electrode of a semiconductor light emitting part, whose both sides are surrounded by a high resistance layer, on the upper surface of said semiconductor light emitting part, and forming another electrode on a conductive region at the same surface of a part other than the semiconductor light emitting part by way of a conductive semiconductor layer beneath the semiconductor light emitting part. CONSTITUTION:A semiconductor light emitting part comprises an N-InP buffer layer 32, an InGaAsP active layer 33, a P-InP clad layer 34 and a P-InGaAsP cap layer 35, both sides of which are surrounded by a high resistance InP layer 39. Laser oscillation is carried out in the active layer in these layers. The N-InP buffer layer 32 is not cut by the high resistance layer 39 but connected to a conductive N-InP region 40 on the outside of the high resistance layer 39 surrounding the light emitting part. A negative electrode 38 is provided on the conductive region 40. A positive electrode 37 is provided on the P- InGaAsP cap layer 35 of the light emitting part. The electrodes are formed on the same surface of a planar structure. |
