| 摘要 |
PURPOSE:To implement a highly efficient blue-light emitting element, which has not been obtained before, by providing a IV-group semiconductor layer between a III-V-group compound semiconductor and a compound semiconductor layer including II-group and VI-group elements as constituent elements. CONSTITUTION:On an N-type GaAs substrate 11, an N-type Ge layer 12, an N-type ZnSe layer 13 and a P-type ZnSe layer 14 are sequentially formed by, e.g., an organic-metal chemical vapor growing method. On the surface of the GaAs substrate 11, an N-type electrode 15 is formed. On the surface of the P-type ZnSe layer 14, a P-type electrode 16 is formed. In this constitution, since the diffusion of Ga from the GaAs substrate 11 to the ZnSe layer is blocked by the Ge layer 12, low resistance P-type ZnSe is obtained. Thus, the highly efficient current-injected blue-light emission can be implemented. |
