| 摘要 |
PURPOSE:To enhance light emitting efficiency, by taking out a current conducting wiring from the central part of a light emitting diode part to an electrode region, which is formed at a position that is in parallel with the light emitting diode part, forming the light emitting surface of each light emitting diode part in a U-shape, reducing the area of the current conducting wiring, which is formed on a P-N junction layer, and making the amount of light emission with respect to the current large. CONSTITUTION:A current conducting wiring 36, which is connected to an electrode part 29 of an N-type Ga1-yAlyAs layer 23 is taken out to an individual negative electrode 26. The electrode part 29 is located at the central part of a light emitting diode 30. The area occupied by the current conducting wire on the light emitting diode part 30 is made as small as possible. Therefore, the light emitting area of the light emitting diode part 30 is made large and the shape of the light emitting surface is of a U-shape. |
