Self-healing MOS capacitor.

摘要

An improved parallel-plate capacitor for integrated circuits incorporate one plate formed from P-type silicon and the other plate formed from N-type silicon, with the voltage applied to the plate bing restricted by the condition that the N-type plate have voltage the same as or more positive than the P-type plate, so that a pinhole short circuit will produce a reverse-biased diode in the N-type plate that will not short out the capacitor.