| 摘要 |
<p>PURPOSE:To form the title mask for X-ray exposure structure with excellent bonding power of X-ray absorbing patterns with a mask substrate as well as long life by a method wherein silicide layers made of absorbing pattern material are junction-formed between X-ray absorbing patterns made of heavy metal and the mask substrate. CONSTITUTION:A silicon nitride film to be a mask substrate 2 is formed on a silicon substrates 1 by pressure-reduced CVD process and then tantalum silicide layers 4 are formed on the overall surface of nitride film 2 by sputtering process etc. Successively tantalum layers to be X-ray absorbing patterns 3 are formed by sputtering process further forming resist layers by spin-coating process. Any specified resist patterns can be formed by exposing and developing the resist layers using electron beams. Finally the tantalum layers and then the silicide layers are etched by reactive ion etching process using the resist patterns as masks to form the specified X-ray absorbing patterns.</p> |
