| 发明名称 |
Production of a lift-off mask and its application |
| 摘要 |
A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10 DEG C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150 DEG to 280 DEG C. The finished lift-off mask is dimensionally stable at temperatures of </=280 DEG C. and does not emit liquid or volatile components when heated. During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160 DEG to 250 DEG C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining. The lift-off mask is particularly suitable for generating conductor patterns on semiconductor substrates if low and uniform contact resistances between the conductor and the semiconductor material and a high degree of pattern accuracy and packing density are required.
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| 申请公布号 |
US4659650(A) |
申请公布日期 |
1987.04.21 |
| 申请号 |
US19860840344 |
申请日期 |
1986.03.17 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MORITZ, HOLGER;PFEIFFER, GERD |
| 分类号 |
H01L21/027;G03F1/00;G03F1/08;G03F7/023;G03F7/039;G03F7/20;G03F7/40;H01L21/306;(IPC1-7):B05D5/12;H01L21/312 |
主分类号 |
H01L21/027 |
| 代理机构 |
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