| 摘要 |
PURPOSE:To improve integration density by a method wherein a photomask pattern, whose part corresponding to a field region has wider width than the width of the part corresponding to an element region, is employed when expo sure for forming a gate electrode is carried out. CONSTITUTION:After a polycrystalline Si film 3 and a photoresist 4 are succes sively formed over the whole surface, a photomask, whose mask pattern 5 is such that the width w2 of its end part 5a corresponding to a field region 1 is larger than the width w1 of its part 5b corresponding to an element region 2, is employed to expose the photoresist 4. The photoresist 4 is developed to obtain a photoresist pattern 4a. The width of the resist pattern 4a is uniform over the whole element region 2 except the end part 4b provided on the field region 1. Therefore, if the polycrystalline Si film 3 is etched with this photoresist pattern 4a, a gate electrode which has a uniform width over the whole element region 2 can be formed. With this constitution, the occupying area of one transis tor can be reduced and integration density can be improved. |
