| 摘要 |
PURPOSE:To obtain a laminated structure type semiconductor device which can stably operate by forming an insulated gate transistor that source and drain potentials are not secured on a circuit configuration in a semiconductor substrate. CONSTITUTION:In a laminated structure type semiconductor device, polycrystalline silicon layers 19, 20 are used as the source and drain electrodes of wiring materials of an MOS transistor formed in a semiconductor substrate 11 of the first layer, polycrystalline silicon layers 21, 22 are used as gate electrodes of MOS transistors of the first and second layers. MOS transistors in which source and drain potentials are not secured to a predetermined potential in the circuit configuration are formed in the substrate 11 of the lowermost layer, back electrodes 31 are formed on the substrate 11, and the substrate potential is applied from here to secure the substrate potential. Thus, it can prevent an erroneous operation due to a bipolar operation. |
