| 摘要 |
The converter obtains an efficient conversion of solar electromagnetic radiation into electrical power. A p-n junction is fabricated close to an optical surface of a region of n-type GaAs which is receptive of the solar radiation. There is a window on the optical surface consisting of a window layer of Ga1-xAl xAs, where x is less than one and greater than zero with a composition to cause the window layer to contribute selectively to absorbing and transmitting certain components of the incoming solar radiation. The layer of Ga1-xAl xAs is made nearly transparent to electromagnetic radiation and is nearly absorbent of the energetic particle radiation content of the received solar radiation. The window layer is an integral part of the procedure for forming the p-n junction. It contributes the p-type doping species to the junction by diffusion into the n-type GaAs substrate. For certain applications, the Ga1-xAl xAs window can be removed by etching with aqueous solution of HCl. If the window if removed, the ohmic contact is then made to the optical surface of the p-type GaAs.
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