| 摘要 |
PURPOSE:To form a separating layer between picture elements with narrow width by protecting a scanning circuit by a primary electrode, and forming a groove for separating between the picture elements by reactive ion etching. CONSTITUTION:An MOS scanning circuit is formed on a semiconductor substrate 1. A primary electrode 7 implants carrier generated in a photoconductive layer 8 to a source 2 by depositing to cover the entire element therewith. Further, the layer 8 is accumulated by a glow discharge of SiH4. A mask pattern 16 corresponding to a groove 17 is formed by resist agent on the layer 8. At this stage, an element is formed by resist agent on the layer 8. At this stage, an element is held at the cathode 12 of an ion etching apparatus, the primary electrode 7 of the element and the cathode of the apparatus are connected to the same potential. The groove 17 is formed by etching with ions accelerated by an electric field. The portion to be contacted with the bottom of the groove 17 is wet etched with phosphoric acid to demarcate the picture element. Eventually, a transparent electrode 9 is formed on the surface. |
