| 摘要 |
PURPOSE:To improve quality by markedly reducing the effect given on the forming region of a semiconductor element by a method wherein a local heating treatment is performed by projecting a high energy ray focused beam on the front and the back sides of a wafer, and both front and back sides of the wafer are brought into the state of mirror-face. CONSTITUTION:The microscopic region on both front and back sides of a semiconductor wafer is heated up by projecting the focused laser beam 21 through a focusing lens 31, and the semiconductor wafer is fused. At this time, the semiconductor wafer 11 is simply placed on an X-Y stage 41, it responds the signal sent from an X-Y stage control circuit 50, and the semiconductor wafer 11 is moved in the X-Y direction in accordance with the movement of the X-Y stage 41. As a result, the fused region of the microscopic region formed by the focused laser beam 21 moves in the direction reverse to the moving direction of the semiconductor wafer 11. The fused region whereon the laser beam 21 is not projected is recrystallized, and an almost mirror-faced flat surface is formed.
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