| 摘要 |
PURPOSE:To reduce the temperature dependence of the offset in a silicon diaphragm type pressure sensor by a method wherein a bonding agent is applied only on the peripheral part of a penetrating hole formed in the pedestal and both of a silicon chip and the structure is bonded. CONSTITUTION:A diaphragm 2 is formed on the first main surface of a silicon chip 1 by recessing part of the first main surface and an electronic circuit is integrated on the second main surface. A pedestal 3 consists of pyrex having a roughly equal thermal expansion coeffi cient to that of silicon, a penetrating hole 4 is formed at a position opposite to the diaphragm 2 and the pedestal 3 and the silicon chip 1 are bonded by an electrostatic bonding method. The bonding of the pedestal 3 and a structure 7 is performed by a method wherein an epoxy silver paste 5 is first applied circularly only on the peripheral part of the penetrating hole 4 formed in the pedestal 3 in a constant width by a screen printing method and so on, a positioning is executed in such a way that the penetrating hole 4 stands opposite to a penetrat ing hole 6 formed in the structure 7 and the pedestal 3 is bonded on the structure 7. As the bonded part of the pedestal 3 and the structure 7 is limited to only the peripheral part of the penetrating hole 4 formed in the pedestal 3 in such a way, the contact area becomes smaller and the effect of thermal expansion of the structure 7 becomes harder to conduct to the pedestal 3. As a result, the effect of thermal expansion of the structure 7 can be re duced. |
