发明名称 Planarized ceramic substrates
摘要 A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.
申请公布号 US4659585(A) 申请公布日期 1987.04.21
申请号 US19850747598 申请日期 1985.06.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ELIAS, KENNETH L.;MARTIN, STUART R.;SLATTERY, WILLIAM J.
分类号 C04B41/87;C04B41/45;H05K1/03;H05K3/00;(IPC1-7):B05D3/06 主分类号 C04B41/87
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