| 摘要 |
PURPOSE:To hold large capacity of a capacitor and to alleviate the step of a contacting hole by allowing a contact forming region to remain due to the selective growth of a high melting point metal layer as it is. CONSTITUTION:A semiconductor substrate 1 is formed of a p-type Si substrate, an oxide film 2 is formed of an SiO2 layer, a gate 3 is formed of a polysilicon layer, and the first insulating layer 4 is formed of an SiO2 layer. Then, high melting point metal layers 5 are selectively grown in holes for forming a capacitor and a contact. Then, an SiO2 layer 6 is grown on the entire substrate, and coated with a spin ON glass layer 7 thereon. Then, a polysilicon layer 8 to become a lower electrode of the capacitor, an SiO2 layer or an Si3N4 layer 9 to become a dielectric layer of the capacitor, and a polysilicon layer 10 to become the opposed electrode of the capacitor are grown to form a capacitor of a stack structure. Thereafter, a PSG layer 11 is grown as the second insulating layer to insulate between the layers, the entire substrate is coated with an aluminum layer, patterned to form an aluminum layer 12 as a wiring layer. |
