| 摘要 |
PURPOSE:To accurately form an offset gate structure by ion implanting source, drain regions by insulating films of two layers, and then removing the insulating films of a substrate side at drain side in the desired amount as a dummy gate. CONSTITUTION:After an N-type semiconductor layer 2 to become the channel region of a Schottky barrier FET is formed on a GaAs substrate 1, an SiO2 film 3 and an Si3N4 film 4 are formed. Then, with the films 3, 4 as masks a source region 6 and a drain region 7 are formed by ion implanting. Then, the films 3, 4 of the source region side are covered with resist 8, and the film 3 is etched from the drain region side. After the resist 8 is removed, a film 3' is etched, and the film 4 is removed. After resist 9 is coated, a film 3'' is removed, and a gate electrode 10 is formed. Eventually, the resist 9 is removed, and a source electrode 21 and a drain electrode 2 are formed. |
