| 摘要 |
<p>A high density, low power dissipating semiconductor memory cell is provided by connecting first and second inputs of a means for maintaining current in one of two conditions to first and second bit lines, by first and second diodes, respectively. Conveniently, the means for maintaining the current in one of two conditions includes first and second transistors operating in the normal current mode. Standby current is provided to the base of the first transistor through the first bit line and first diode, and to the base of the second transistor through the second bit line and second diode.</p> |
