| 摘要 |
PURPOSE:To utilize long wavelength beams effectively, and to obtain high conversion efficiency by forming electrode layers shaped onto a substrate in succession, amorphous thin-film layers constituting a plural pair of PIN junctions and electrode layers pairing with said electrodes and composing at least one of said I layers by an a-Ge:H film. CONSTITUTION:An a-Ge:H film, film quality thereof does not lower on the basis of alloying, etc., is substituted for a conventional a-SiGe:H film in an I layer controlling long wavelength sensitivity (conversion efficiency), and forbidden band width E9 is lowered. Glass is used as a substrate 1, ITO (2,000Angstrom ) as a transparent electrode 2 and an a-Si:H film (400Angstrom ), an a-SiGe:H film (1,500Angstrom ) and an a-Ge:H film (5,000Angstrom ) as I1, I2 and I3 respectively, and other P1-P3 and N1-N3 are each shaped by a-Si:H films, and film thickness is brought respectively to 100Angstrom . The forbidden band width E9 of said I1-I3 is each brought to 1.8eV (I1), 1.6eV (I2) and 1.1eV (I3). |
