| 摘要 |
PURPOSE:To increase the ON-state currents of a MOS type TFT formed on an insulating substrate or an insulating film further and reduce OFF-state currents thereof further, and to improve the characteristics of an integrated circuit constituted of the TFT by shaping the insulating film containing hydrogen to the TFT. CONSTITUTION:A passivation film 7 is formed through the sputtering of SiO2 in a H2 atmosphere. H2 can be changed in order to acquire desired TFT characteristics within a range to several dozen % from several %, using Ar gas as a base. Hydrogen is taken into a sputtered SiO2 film through the sputtering of SiO2 in the hydrogen atmosphere. Hydrogen reaches a gate insulating film and polycrystalline silicon as a carrier conductive layer and the interface between both the gate insulating film and the carrier conductive layer as mentioned above, an electrically inactivates defects existing on said each film or the interface. Hydrogen made to be contained in said SiO2 reaches a polycrystalline silicon layer, etc. through heat treatment after the sputtering of SiO2, thus improving the characteristics of a TFT. When heat treatment after said sputtering of SiO2 is conducted in the hydrogen atmosphere, the characteristics of the TFT are enhanced remarkably. |
