| 摘要 |
PURPOSE:To prevent a primary field oxide film from being deleted by overetching by employing a substance to be etched with silicon nitride or polysilicon when forming a side wall by etching back by RIE. CONSTITUTION:A gate electrode 24 and the first wiring layer 25 are simultaneously formed through a gate oxide film 23 and a field oxide film 22 on a semiconductor substrate 21, and with the electrode 24 and the layer 25 as masks low density impurity regions 28, 30 are formed on the substrate 21. Then, side walls 32, 42 are formed of materials having different etching speeds from the layers 22, 23 for predetermined etchant on the side walls of the electrode 24 and the layer 25. With the walls 32, 42 as masks a high density impurity region 34 is formed. Then, the walls 32, 42 are removed by predetermined etchant. Then, a high resistance layer 37 for connecting, for example, the layer 25 and the region 28 is formed in a shearing contacting portion 3. |
