METHOD OF EPITAXIAL LAYER TREATMENT BEFORE SILICON EPITAXIAL STRUCTURE MEASURING,申请号CS19850006346-传众专利搜索

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发明名称	METHOD OF EPITAXIAL LAYER TREATMENT BEFORE SILICON EPITAXIAL STRUCTURE MEASURING
摘要
申请公布号	CS249580(B1)	申请公布日期	1987.04.16
申请号	CS19850006346	申请日期	1985.09.04
申请人	STASTNY,VLADIMIR,CS;VESELY,MIROSLAV,CS;MLEJNKOVA,JIRINA,CS	发明人	STASTNY,VLADIMIR,CS;VESELY,MIROSLAV,CS;MLEJNKOVA,JIRINA,CS
分类号	H01L21/36;(IPC1-7):H01L21/36	主分类号	H01L21/36
代理机构		代理人
主权项
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