发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To prevent the fall of unnecessary resulted product of reaction and to improve film quality by providing a semi-cylindrical electrode which is opened in the upper part to face a cylindrical substrate so as to cover the substrate. CONSTITUTION:The semi-cylindrical electrode 3 which is opened in the upper part for making glow discharge is provided to face the cylindrical substrate 1 to be formed with an amorphous silicon film, etc. Many small holes to supply a reactive gas are provided to the electrode 3. The reactive gas is supplied from these holes to the circumference of the substrate 1. A high-frequency voltage is impressed to the electrode 3 to generate the glow discharge between the substrate 1 and the electrode 3. The reactive gas is held activated and the particles of the reactive gas deposit on the substrate 1 to form the amorphous silicon film, etc. Since the substrate 1 is under rotation, the film formation is uniformly executed. A reaction vessel wall 5 above the substrate 1 is fairly apart from the electrode 3 and the glow discharge is not generated above the substrate 1; therefore, the fall of the unnecessary resulted product of reaction from above is obviated.
申请公布号 JPS6283472(A) 申请公布日期 1987.04.16
申请号 JP19850222201 申请日期 1985.10.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KURAMOTO AKIMASA;TAKIMOTO AKIO;WATANABE MASANORI
分类号 C23C16/24;C23C16/50;G03G5/08;G03G5/082 主分类号 C23C16/24
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