PROCESS FOR FORMING A POLYSILICON GATE INTEGRATED CIRCUIT DEVICE,申请号DE19813175991-传众专利搜索

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发明名称	PROCESS FOR FORMING A POLYSILICON GATE INTEGRATED CIRCUIT DEVICE
摘要
申请公布号	DE3175991(D1)	申请公布日期	1987.04.16
申请号	DE19813175991	申请日期	1981.10.19
申请人	NCR CORPORATION	发明人	BROWER, RONALD WAYNE
分类号	C22B21/00;H01L21/00;H01L21/225;H01L21/28;H01L21/82;H01L27/08;(IPC1-7):H01L21/28;H01L21/90	主分类号	C22B21/00
代理机构		代理人
主权项
地址

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