| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING AN INSULATING FILM FOR COMPONENT ISOLATION |
| 摘要 |
A method of forming a flat field region in a semiconductor substrate, which comprises forming a recess in the substrate, forming a covering on the whole surface of the substrate with a first insulating film such as plasma CVD SiO2 film which gives a layer at the side portion of the recess more rapidly etchable as compared with other portions, selectively removing the layer at the sid |
| 申请公布号 |
DE3175992(D1) |
申请公布日期 |
1987.04.16 |
| 申请号 |
DE19813175992 |
申请日期 |
1981.12.31 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUROSAWA, KEI;SHIBATA, TADASHI |
| 分类号 |
H01L21/3105;H01L21/762;(IPC1-7):H01L21/76;H01L21/31 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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| 主权项 |
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