SEMICONDUCTOR DEVICE COMPRISING MEMORY CIRCUITS

摘要

A semiconductor device comprising memory circuits coated with a resinous film for shielding these circuits from the radioactive rays formed in substrate material. The resinous film is divided into a plurality of portions which are separated from one another and further coats at least memory cells and sense amplifiers. In one of the embodiments a part of the resinous film is removed at the portion of the chip other than said memory cells and sense amplifiers.