Semiconductor device having a MOS transistor and method of manufacturing the same.

摘要

A semiconductor device includes a semiconductor body (40) of one conductivity type having at least first and second recesses, first and second semiconductor regions (42A and 42B) of an opposite conductivity type formed in the surface areas of the first and second recesses in the semiconductor body (40), first and second epitaxial layers (44A and 44B) of the opposite conductivity type respectively formed in the first and second recesses in the semiconductor body (40) and having an impurity concentration lower than that of the first and second semiconductor regions (42A and 42B), a MOS transistor structure (Q2) formed in the first epitaxial layer (44A), and a double diffusion MOS transistor (Q1) formed in the second epitaxial layer (44B), whose drain includes the second semiconductor region (42B) and the second epitaxial layer (44B).