| 摘要 |
<p>PURPOSE:To obtain a good lithography by increasing the effective sensitivity of a photosensitive material by composing at least a part of a film part of the masking structure to be exposed to energy irradiation out of a fluorescent substance. CONSTITUTION:In a masking structure for lithography, a masking material holding thin film is composed of a fluorescent substance or it is compounded with a fluorescent substance. In the case of the former, a thickness of the masking material holding thin film is preferably at least 2mum in consideration of its strength and 10mum or below in consideration of the permeability of the irradiation of energy. Also in the case of the former, as a material for forming the masking material holding thin film, various kinds of fluorescent substances can be used, but more particularly, CaF2:Eu and MgF2:Eu are used frequently with respect to their strength. In the case of the latter, the masking material holding thin film is formed of a laminar film composed of, for example, a thin film consisting of a fluorescent substance and a thin film consisting of an inorganic substance such as Si nitride and an organic substance such as polyimide. Particularly, a laminar film with the thin film consisting of an organic substance is effective with respect to its strength.</p> |
