发明名称 HIGH-FREQUENCY SEMICONDUCTOR DEVICE
摘要 A semiconductor device including a metallic container for containing a radio frequency semiconductor circuit on a bottom surface thereof; a cap for covering the container; and input and output terminals connected to the circuit and penetrating through a side wall of the container at locations opposite to each other. The bottom surface of the container includes space for mounting the radio frequency semiconductor circuit and supplementary space for mounting elements of a supplementary circuit. A cutoff member for increasing the cutoff frequency of the waveguide mode wave propagation between the input and output terminals within the container is provided on a part of the supplementary space, so that the cutoff frequency is higher than the wave frequency used in the radio frequency semiconductor circuit.
申请公布号 EP0157505(A3) 申请公布日期 1987.04.15
申请号 EP19850301547 申请日期 1985.03.06
申请人 FUJITSU LIMITED 发明人 YAMAMURA, SHIGEYUKI
分类号 H01L23/04;H01L23/02;H01L23/047;H01L23/12;H01L23/66;(IPC1-7):H01L23/56 主分类号 H01L23/04
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