| 摘要 |
PURPOSE:To make the time change in electric characteristics due to the effect of external atmosphere hard to occur, by arranging thin electrode films in a crossed finger pattern on a substrate, and forming a thin a-Si:H film as a functional and surface protecting film. CONSTITUTION:A thin film device is composed of a substrate 1, e.g., comb shaped counter electrodes 2a and 2b, which are formed on the substrate, and a light conducting and surface protecting film 3 made of a-Si:H. The light conducting region is shown by a shaded part 4. Thin electrode films are arranged on the substrate so as to face each other beforehand. The thin a-Si:H film, which is operated as a function film and as a surface protecting film, is arranged on the thin electrode films. Namely, the surface of the light conducting region is provided at an interface with the substrate. This is different from a conventional structure, in which a light conducting region is exposed on the surface. It is contrived so that the surface is arranged at a position, which is separated from an external atmosphere as much as possible. Therefore, the effect of the external atmosphere is hardly affected. Intrusion of deteriorating factors in using environmental conditions, especially, water molecules and oxygen molecules, can be blocked. |
