发明名称 Semiconductor light-emitting element.
摘要 <p>A semiconductor light-emitting element of a metal/­organic film/semiconductor junction structure has a semi­conductor layer (11), and an organic Langmuir-Blodgett thin film (13) formed on the semiconductor layer. The thin film (13) includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer (14) of metallic material is formed on the thin film. </p>
申请公布号 EP0218422(A2) 申请公布日期 1987.04.15
申请号 EP19860307386 申请日期 1986.09.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAITO, KATSUYUKI PATENT DIVISION K.K. TOSHIBA;OKAMOTO, MASAYOSHI PATENT DIVISION K.K. TOSHIBA;MIZUSHIMA, KOICHI PATENT DIVISION K.K. TOSHIBA;NAKAYAMA, TOSHIO PATENT DIVISION K.K. TOSHIBA;SUGIUCHI, MASAMI PATENT DIVISION K.K. TOSHIBA;MIURA, AKIRA PATENT DIVISION K.K. TOSHIBA
分类号 H01L33/00;H01L51/30;H01L51/50 主分类号 H01L33/00
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