A process for producing a high purity oxide layer on a semiconductor substrate.

摘要

A high purity oxide layer is produced on a semiconductor substrate (8) by heating the substrate in the presence of an oxidising ambient in a multi-walled reaction chamber (1) provided with a heating element (12). Simultaneously a halogen-containing ambient is caused to flow through an outer portion (10) of the reaction chamber. A gaseous ambient is caused to flow through an intermediate portion (9) of the reaction chamber to remove water by-product from the reaction with the halogen which occurs in the outer portion (10) of the reaction chamber.