MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain the first semiconductor layer of a little uneveness of a surface present on a first insulating layer by eliminating the generation of crystal grain boundary and crystalline deffect in the first semiconductor layer by irradiating the layers with energy beams after arranging a second semiconductor layer on the first semiconductor layer on the first insulating layer where a device is to be fabricated with an intermediary of a second insulating film. CONSTITUTION:An Si oxide film 12 is formed by thermal oxidation technique and an Si oxide 21 and a polysilicon films 13 and 22 and an Si nitride film 14 are formed by CVD technique. Such semiconductor substrate is irradiated with Ar laser beams of continuous oscillation whose diameter is constricted to 100mum while scanning the beams in a direction of an arrow in parallel to the stripes of the Si nitride film 14 at 25cm/sec. The heat absorbed in the polysilicon film 22 heats the polysilicon film 13 through the Si oxide film 21. After the irradiation with laser beams, the Si nitride film 14, polysilicon film 22, and Si oxide film 21 are removed by etching and a device such as transistor is fabricated on the polysilicon 13 which has been single crystallized.