| 摘要 |
PURPOSE:To manufacture an SiC device readily, by removing a part of SiC, which is grown on an Si substrate, by etching, and thereafter forming an SiO2 film. CONSTITUTION:At first, on an Si substrate 10, an SiC layer 20 is grown by a chemical vapor growing method using, e.g., SiH4 and C3H8. Then plasma etching is performed on the SiC layer by using fleon and oxygen. With the SiC islands having the required shape and number being made to remain, the SiC layer is removed. Then the device is heated in a steam atmosphere at 1,150 deg.C for about 30min, and thermal oxidation is carried out. The thickness of an SiO2 film 11, which is formed by said oxidation, is about 0.05mum on the SiC 20. But the thickness on the Si substrate 10 reaches 0.55mum, which is about 10 times that on the SiC 20. Thus the SiC islands having the desired shape and number and characterized by the flat surfaces are formed on the Si substrate in the isolated pattern in a self-aligning manner. |
