| 摘要 |
PURPOSE:To omit a contact with a conducting resin and to obtain a solid-state image pickup device characterized by very high heat resistance and reliability, by forming a contact between an ITO upper electrode and a pad electrode of an a-Si light element by a photoprocess. CONSTITUTION:A contact hole is formed in an interlayer insulating film 2-5. Al or Al-Si is deposited by sputtering. An aluminum lower electrode 2-6 and a pad electrode 2-7 are formed by a photoprocess. Then a light conducting thin film 2-8 is formed. An opaque ultraviolet-ray hardening polyimide film 2-9 is applied by spin coating. A through hole 2-10 and a contact hole 2-11 are formed. Then an ITO upper electrode 2-12 is formed. Since hydrochloric acid is included in etching liquid of the ITO, which forms a contact between the ITO upper electrode 2-12 and the pad electrode 2-7, the ultraviolet-ray hardening polyimide serves a role of an etching stopping film for aluminum wirings. Finally a passivation film 2-13 is formed, and a pad opening hole 2-14 is provided. |
