| 摘要 |
<p>PURPOSE:To display gradation well by the absence of off-set. CONSTITUTION:Side faces facing each other of a drain electrode 15a and a source electrode 19a are formed into taper faces 31 and 32 respectively. Ohmic contacting layers 25 and 26 are formed throughout taper faces 31 and 32, and a semiconductor layer 22 is formed on them. In case that these taper faces 31 and 32 are formed, a transparent electrode is formed and anisotropic etching is not used but isotropic etching is used to pattern this electrode into a display electrode 15 and a source bus 19 as prescribed. That is, the electrode is etched not only in the vertical direction of a substrate 11 but in the horizontal direction, and both etching speeds are made equal to each other approximately, and thus, taper faces 31 and 32 form 45 deg. to the substrate 11.</p> |
