| 摘要 |
<p>PURPOSE:To enable electron emitting characteristic of high brightness and excellence to be realized, by applying a strong electric field under ultra-high vacuum, after oxidizing the surface of a carbon titanium nitride monocrystal emitter through a heat treatment in oxygen gas. CONSTITUTION:A carbon titanium nitride monocrystal emitter is subjected to heat treatment at 900-1,400 deg.C in oxygen gas to oxidize the surface of the emitter, and then a strong electric field of 10<7>V/cm or more is applied under ultra-high vacuum to the emitter. A TiCN chip with a clean surface is heated up to 900-1,400 deg.C under vacuum of, for instance, 10<-6>Torr in oxygen gas, and oxide is produced on the surface. The heating time is chosen so as to be 5L (L=10<-6>X1sec) or more. After oxidizing the chip surface, if an electron beam is kept radiated for 30min or more with a total current of 10muA-20muA under ultra-high vacuum, variation of the emission pattern takes place. As a result, the field emitter presents excellent characteristic of current noise less than + or -0.2% and drift of less than + or -0.2%hr, and its electron emission characteristic is extremely stable, showing a constant current value.</p> |
