| 摘要 |
PURPOSE:To prevent the deterioration of a gate oxide film and a latch up from occuring by a method wherein, within a semiconductor device formed of complementary MOS transistor in a semiconductor layer on an insulator, a channel region is formed into curved shape along a gate oxide film. CONSTITUTION:A channel region 17c is formed into curved shape along a gate oxide film 15 between source.drain 17a, 17b. For instance, when an N channel MOS transistor is actuated, electrons flow from the source 17a to the drain 17b describing an arc along the ate film 15 due to the short means free stroke of carrier in silicon such as several 100Angstrom . At this time, the electrons separating from the gate oxide film 15 flow into a silicon layer 12 since the electrons are accelerated near the drain 17b. The hot carriers produced in such a state are decelerated before reaching the gate oxide film 15 to prevent the gate oxide film 15 from deteriorating. Besides, the source and drain are separated from each other by an insulator 11 to avoid the influence of latch up. |
