发明名称 MANUFACTURE OF HIGH PERFORMANCE FIELD EMITTER
摘要 <p>PURPOSE:To improve electric current stability and electron emission characteristic, by applying a strong electric field under ultra-high vacuum, after subjecting a carbon titanium nitride monocrystal emitter to treatment in a hydro-carbon gas and forming a carbon coat on the emitter surface. CONSTITUTION:A carbon titanium nitride monocrystal emitter is subjected to heat treatment at 900-1,400 deg.C in a hydro-carbon gas to form a carbon coat on its surface, and then a strong electric field of 10<7>V/cm or more is applied under ultra-high vacuum to the emitter. The carbon coat is formed by heating a TiCN chip at 900-1,400 deg.C in a hydro-carbon gas. The heating time should be 100L (L=10<-6>X1sec) or more. Namely, the hydro-carbon gas is introduced into an ultra-high vacuum device, and in the case of a degree of vacuum of 5X10<-6>Torr, the treatment time of 20sec or more is required. As a result, the field emitter presents excellent characteristic of current noise of less than + or -0.2% and drift of less than + or -0.2%/hr, and its electron emission characteristic is extremely stable, showing a constant current value.</p>
申请公布号 JPS6280937(A) 申请公布日期 1987.04.14
申请号 JP19850219834 申请日期 1985.10.02
申请人 NATL INST FOR RES IN INORG MATER 发明人 ISHIZAWA YOSHIO;OSHIMA CHUHEI;OTANI SHIGEKI;AOKI SUSUMU
分类号 H01J9/02 主分类号 H01J9/02
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